Trench MOSFET technology is the newly introduced MOSFET technology in which the gate electrode of the MOSFET is buried in trench etched in Silicon to get a vertical structure to enhance the channel density. The MOSFET using the trench gate is called TrenchMOS or UMOS (since the trench is U shaped).The main feature of TrenchMOS is that it lacks the JFET effect.

Continue reading “Trench MOSFET”